 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 1997 Nov 24 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. BYV27 series This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 VR continuous reverse voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 IF(AV) average forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 IF(AV) average forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - - - - - - - - - - - - - - - MAX. 50 100 150 200 300 400 500 600 50 100 150 200 300 400 500 600 2.0 1.9 1.6 1.30 1.25 1.10 V V V V V V V V V V V V V V V V A A A A A A UNIT Ttp = 85 C; lead length = 10 mm; see Figs 2, 3 and 4; averaged over any 20 ms period; see also Figs 14, 15 and 16 Tamb = 60 C; printed-circuit board mounting (see Fig. 25); see Figs 5, 6 and 7; averaged over any 20 ms period; see also Figs 14, 15 and 16 - - - - - - 1997 Nov 24 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYV27-50 to 400 BYV27-500 and 600 IFRM repetitive peak forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 IFSM non-repetitive peak forward current BYV27-50 to 400 BYV27-500 and 600 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig. 17 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off Tamb = 60 C; see Figs 11, 12 and 13 CONDITIONS Ttp = 85 C; see Figs 8, 9 and 10 - - - - - - - - -65 -65 BYV27 series MIN. MAX. 20 16 14 13 11 50 40 20 +175 +175 A A A A A A A UNIT mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 VF forward voltage BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 V(BR)R reverse avalanche breakdown voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 IR reverse current VR = VRRMmax; see Fig. 21 VR = VRRMmax; Tj = 165 C; see Fig. 21 IR = 0.1 mA 55 110 165 220 330 440 560 675 - - - - - - - - - - - - - - - - - - - - 5 150 V V V V V V V V A A IF = 2 A; see Figs 18, 19 and 20 CONDITIONS IF = 2 A; Tj = Tj max; see Figs 18, 19 and 20 MIN. - - - - - - TYP. - - - - - - MAX. 0.78 0.82 1.00 0.98 1.05 1.25 V V V V V V UNIT 1997 Nov 24 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL trr PARAMETER reverse recovery time BYV27-50 to 200 BYV27-300 to 600 Cd diode capacitance BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 dI R -------dt maximum slope of reverse recovery current when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig. 26 CONDITIONS when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 27 f = 1 MHz; VR = 0; see Figs 22, 23 and 24 MIN. - - - - - - BYV27 series TYP. - - MAX. 25 50 UNIT ns ns 100 80 65 - - - - 4 pF pF pF A/s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig. 25. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 46 100 UNIT K/W K/W 1997 Nov 24 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA MGA849 BYV27 series handbook, halfpage 2.0 I F(AV) (A) handbook, halfpage 2.0 MLC293 I F(AV) (A) 20 1.6 15 10 lead length (mm) lead length 10 mm 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 100 Ttp (o C) 200 0 100 Ttp (o C) 200 BYV27-50 to 200 a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. BYV27-300 and 400 a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 3 MGK648 IF(AV) (A) lead length 10 mm 2 handbook, halfpage 2.0 MGA848 I F(AV) (A) 1.6 1.2 0.8 1 0.4 0 0 BYV27-500 and 600 a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp (C) 200 0 0 100 T amb ( o C) 200 BYV27-50 to 200 a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig. 25. Switched mode application. Fig.4 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1997 Nov 24 5 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, halfpage 1.6 MLC294 handbook, halfpage 1.6 MGK649 I F(AV) (A) 1.2 IF(AV) (A) 1.2 0.8 0.8 0.4 0.4 0 0 100 Tamb ( o C) 200 0 0 100 Tamb (C) 200 BYV27-300 and 400 a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig. 25. Switched mode application. BYV27-500 and 600 a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig. 25. Switched mode application. Fig.6 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.7 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, full pagewidth 20 MLC297 I FRM (A) 16 = 0.05 12 0.1 8 0.2 0.5 4 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV27-50 to 200 Ttp = 85 C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 24 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, full pagewidth 20 MLC299 I FRM (A) 16 = 0.05 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV27-300 and 400 Ttp = 85 C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 20 MGK650 IFRM (A) 16 = 0.05 12 0.1 8 0.2 4 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 BYV27-500 and 600 Ttp = 85 C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 24 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, full pagewidth 16 MLC298 I FRM (A) 12 = 0.05 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV27-50 to 200 Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 16 MLC300 I FRM (A) 12 = 0.05 8 0.1 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV27-300 and 400 Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 24 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers 20 BYV27 series MGK651 handbook, full pagewidth IFRM (A) 16 12 = 0.05 8 0.1 4 0.2 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 BYV27-500 and 600 Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGA870 handbook, halfpage 2.4 P (W) a=3 2.5 2 1.57 handbook, halfpage 2.0 2.4 P (W) 2.0 MLC292 a=3 2.5 2 1.57 1.42 1.6 1.42 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 1 I F(AV) (A) 2 0 1 I F(AV) (A) 2 BYV27-50 to 200 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. BYV27-300 and 400 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.14 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.15 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1997 Nov 24 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, halfpage 2.0 MGK652 P (W) a=3 2.5 2 1.57 1.42 handbook, halfpage 200 MGK645 1.6 Tj (C) 1.2 100 0.8 0.4 0 0 0 1 IF(AV)(A) 2 0 50 VR (%VRmax) 100 BYV27-500 and 600 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Solid line = VR. Dotted line = VRRM; = 0.5. Fig.16 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.17 Maximum permissible junction temperature as a function of maximum reverse voltage percentage. handbook, halfpage 6 MGA864 handbook, halfpage 6 MLC291 IF (A) 4 IF (A) 4 2 2 0 0 1 V F (V) 2 0 0 1 V F (V) 2 BYV27-50 to 200 Dotted line: Tj = 175 C. Solid line: Tj = 25 C. BYV27-300 and 400 Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.18 Forward current as a function of forward voltage; maximum values. Fig.19 Forward current as a function of forward voltage; maximum values. 1997 Nov 24 10 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, halfpage 6 MBH649 103 handbook, halfpage IR (A) MGC550 IF (A) 4 102 2 10 0 1 0 1 V F (V) 2 0 100 Tj (C) 200 BYV27-500 and 600 Dotted line: Tj = 175 C. Solid line: Tj = 25 C. VR = VRRMmax. Fig.20 Forward current as a function of forward voltage; maximum values. Fig.21 Reverse current as a function of junction temperature; maximum values. 102 handbook, halfpage MLC295 102 handbook, halfpage MLC296 Cd (pF) Cd (pF) 10 10 1 1 10 102 V R (V) 103 1 1 10 102 V R (V) 103 BYV27-50 to 200 f = 1 MHz; Tj = 25 C. BYV27-300 and 400 f = 1 MHz; Tj = 25 C. Fig.22 Diode capacitance as a function of reverse voltage; typical values. Fig.23 Diode capacitance as a function of reverse voltage; typical values. 1997 Nov 24 11 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series 102 handbook, halfpage Cd (pF) MGK653 handbook, halfpage 50 25 7 50 10 2 3 1 1 10 102 VR (V) 103 MGA200 BYV27-500 and 600 f = 1 MHz; Tj = 25 C. Dimensions in mm. Fig.24 Diode capacitance as a function of reverse voltage; typical values. Fig.25 Device mounted on a printed-circuit board. IF ndbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.26 Reverse recovery definitions. 1997 Nov 24 12 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.27 Test circuit and reverse recovery time waveform and definition. 1997 Nov 24 13 Philips Semiconductors Ultra fast low-loss controlled avalanche rectifiers PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads D DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 3.81 G max. 4.57 L min. 28 (1) Product specification BYV27 series SOD57 k a b L G L 0 2.5 scale 5 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD57 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14 DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1997 Nov 24 14 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers NOTES BYV27 series 1997 Nov 24 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA56 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/1200/04/pp16 Date of release: 1997 Nov 24 Document order number: 9397 750 02663 |
Price & Availability of BYV27-600
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |